Distributed Products CreaTec

CreaTec GmbH - High Quality MBE Products

Your Innovative Partner in MBE and LT-STM-AFM

Effusion

Effusion cells:

A wide variety of cells for different temperature ranges and applications manufactured under cleanroom conditions

RS2 System

RS2 system:

Complete MBE System for the preparation of epitaxial films (semiconductors, metals, dielectrics and organics) on 1" or 2" wafers for various scientific applications

RS3 System
RS3 system:

Complete MBE System for the preparation of epitaxial films (semiconductors, metals, dielectrics and organics) on 2" to 4" wafers for various scientific applications.

III-N System

MBE-System for III-Nitrides:

Designed by CreaTec, the state-of-the-art MBE system for III-nitrides combines standard MBE growth techniques using a nitrogen plasma source with CVD growth techniques based on a special ammonia source. The chamber design is optimized for the usage of ammonia using a special cryoshroud with a unique pumping system for a high throughput of grown layers. The results obtained from epitaxial GaN layers are excellent and demonstrate the high performance of the system.

Rapid Thermal Annealing System

RTA System:

The rapid temperature annealing system (RTA) is used for the processing of semiconductor wafers by rapid thermal heating up or annealing from ultra-high vacuum to ambient pressure conditions with different atmospheres like oxygen and nitrogen. Clean, simple and rugged design for compatibility with today's semiconductor processing technologies. Several unique features guarantee excellent uniformity and process reproducibility.

 

PHARAO System

PHARAO System:

MBE and x-ray diffraction equipment for in situ real-time synchrotron radiation studies

The Pharao Project of the Paul-Drude-Instituteat BESSY II in Berlin is dedicated to the in situ real-time characterization of MBE growth using synchrotron x-ray diffraction.

 

 

Since 1998, the low temperature scanning tunneling microscope (LT-STM) became an essential part of the CreaTec product range. Apart from its nanoanalytical capabilities it allows the manipulation of atoms and molecules in the temperature range between 6 and 300 K.

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